What is BS EN 62047-16 – Determining the residual stress of MEMS films about?
BS EN 62047-16 is the 16th part of an international standard used for semiconductor devices.
BS EN 62047-16 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on the substrate.
Who is BS EN 62047-16 - Determining the residual stress of MEMS films for?
BS EN 62047-16 on Semiconductor devices is useful for:
- Semiconductor foundries
- Manufacturer of electronic devices
- Manufacturer of automotive parts
- Electronic engineer
Why should you use BS EN 62047-16 - Determining the residual stress of MEMS films?
Micro-electromechanical systems (MEMS) is a process technology that is useful in creating tiny integrated devices or systems. These devices are useful in combining mechanical and electrical components.
BS EN 62047-16 can be your best guide in conducting the test method for microelectromechanical devices. This test method is useful in measuring the residual stresses of the film. The wafer curvature method is useful in wafer-level processing which helps the wafer in maintaining the biaxial symmetry and stress-free. The cantilever beam deflection method is useful in chip level processing that helps in comparing small deflection with the beam length.
By using BS EN 62047-16, you can determine the residual stresses of MEMS film that results in manufacturing good quality Micro-electromechanical devices.
