What is BS IEC 60747‑9 - Insulated-gate bipolar transistors (IGBTs) about?
BS IEC 60747 is a series of international standards for semiconductor devices that specifies the test methods for measuring the insulated-gate bipolar transistors (IGBTs) used in semiconductor devices.
BS IEC 60747‑9 is the ninth part of semiconductor devices that is useful in determining the characteristics of insulated-gate bipolar transistors (IGBTs).
BS IEC 60747‑9 specifies product-specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
Who is BS IEC 60747‑9 - Insulated-gate bipolar transistors (IGBTs) for?
BS IEC 60747‑9 on semiconductor devices is useful for:
- Semiconductor foundries
- Manufacturers of electronic devices
- Aerospace engineers
- Personnel of energy sectors
- Electronic engineers
Why should you use BS IEC 60747‑9 - Insulated-gate bipolar transistors (IGBTs)?
Insulated-gate bipolar transistors (IGBTs) is the three-terminal power semiconductor devices mainly used as electronic switches that consist of four-layer that is controlled by a metal oxide semiconductor (MOS) gate structure.
BS IEC 60747-9 guides you in determining the characteristics and ratings which are valid in the whole range of operating conditions in the semiconductor devices. BS IEC 60747-9 assures that circuits for P-channel devices are adapted by reversing the polarities of metres, generators, and power sources that are used in measurement procedures for testing and confirming the current capability of IGBTs. The maximum short circuit safe operating area (SCSOA) mentioned in BS IEC 60747-9 helps in verifying and reducing the failures during load short circuit conditions. BS IEC 60747-9 navigates you through the endurance and reliability test that are useful in identifying the capacity of the devices to work under different climatic conditions for sustaining the devices.
Overall, BS IEC 60747‑9 guides you through the process of production of high-quality semiconductor devices by measuring the insulated-gate bipolar transistors (IGBTs) and providing product specifications, rating verification and measurement techniques for the safety and reliability of the devices.
What’s changed since the last update?
BS IEC 60747‑9:2019 supersedes BS IEC 60747‑9:2007. BS IEC 60747‑9:2019 includes some technical changes with respect to BS IEC 60747‑9:2007. These include:
- Reverse-blocking IGBT and its related technical contents have been added
- Reverse-conducting IGBT and its related technical contents have been added
- Some parts of the previous edition have been amended, combined or deleted
