What is BS IEC 62047‑36 - Test methods for MEMS piezoelectric thin films about?
BS IEC 62047 is an international standard that discusses semiconductor devices including microelectromechanical devices. The main aim of the IEC 62047 series is to provide entities involved with semiconductor technology with best industry techniques to demonstrate the reliability and performance of their devices and components.
BS IEC 62047‑36 is the 36th part of the series that specifies test methods for evaluating the durability of MEMS piezoelectric thin film materials under the environmental stress of temperature and humidity and under electrical stress, and test conditions for appropriate quality assessment.
Specifically, BS IEC 62047‑36 specifies test methods and test conditions for measuring the durability of a DUT under temperature and humidity conditions and applied voltages. It further applies to evaluations of converse piezoelectric properties in piezoelectric thin films formed primarily on silicon substrates, i.e., piezoelectric thin films used as actuators.
Note: BS IEC 62047‑36 does not cover reliability assessments, such as methods of predicting the lifetime of a piezoelectric thin film based on a Weibull distribution.
Who is BS IEC 62047‑36 - Test methods for MEMS piezoelectric thin films for?
BS IEC 62047‑36 on MEMS piezoelectric thin films is applicable to:
- Semiconductor and microelectromechanical device manufacturers
- Manufacturers of electronic equipment and components
- Manufacturers of piezoelectric devices
- Semiconductor technology industry
- Automotive industry
- Product design engineers
- Electronics and mechanical engineers
- Quality control and testing agencies
Why should you use BS IEC 62047‑36 - Test methods for MEMS piezoelectric thin films?
Piezoelectric MEMS technology belongs to an interdisciplinary field founded on a wide range of element technologies including piezoelectric thin film materials, thin film deposition and microfabrication processes, device design, and system formulation.
In order to realize a viable MEMS piezoelectric thin film, it is essential to gain a clear understanding of how its piezoelectric properties change as a result of the environmental stress of temperature and humidity, and degradation in the piezoelectric material over time at its surfaces and interfaces. Achieving a viable MEMS piezoelectric thin film will also require a clear understanding of dielectric withstand for the electrical stress of a voltage (electric field) higher than the drive voltage (electric field) used for normal operations.
The following summarizes the features of BS IEC 62047‑36:
- The degree of degradation in a device under test (DUT) is evaluated by measuring the piezoelectric properties of the DUT before and after applying the environmental stress of temperature and humidity using the measurement methods in IEC 62047-30
- Test conditions for moist heat and dielectric withstand tests are derived from existing standards for semiconductor devices and fixed capacitors of ceramic dielectric
- The dielectric withstand property is evaluated by measuring the leakage current under the DC bias voltage.
