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Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET). Fast BTI test for MOSFET | Status: Current
description
1 Scope
This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
Details
Publisher
BS
File size
1.23 MB
Pages
26
Format
PDF
Publication date
2023-03-30
ISBN-13
978-2-832-28610-4
ISBN-13 plain
9782832286104
ISBN-10
2832286104