What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about?
BS IEC 63068-1 is the first part of an international standard used for semiconductor devices that helps in classifying the defects in silicon carbide homoepitaxial. By using BS IEC 63068-1 you can manufacture good quality semiconductor devices.
BS IEC 63068-1 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
Who is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer for?
BS IEC 63068-1 on non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer useful for:
- Manufacturer of semiconductor devices
- Manufacturers related to electronic devices
- Manufacturers of automobile industries
- Electronic engineers
Why should you use- Silicon carbide homoepitaxial wafer?
Silicon carbide homoepitaxial wafer is useful in the fabrication of very high-voltage and high-power devices.
By using BS IEC 63068-1, you can identify the defects in the silicon carbide homoepitaxial wafer. This helps in classifying the defects according to the crystallographic type and structure. Using BS IEC 63068-1 best practice guidance, you can improve the quality and reliability of silicon carbide homoepitaxial wafers. This results in manufacturing good quality semiconductor devices.
