BS IEC 63275-1:2022

Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Test method for bias temperature instability | Status: Current

1 Scope This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).