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Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials. | Status: Confirmed, Current
description
1 Scope
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 × 1016 atoms/cm3 to 1 × 1020 atoms/cm3.
Details
Publisher
BS
File size
1.04 MB
Pages
30
Format
PDF
Publication date
2010-08-31
ISBN-13
978-0-580-57402-3
ISBN-13 plain
9780580574023
ISBN-10
0580574023