What is ISO 21820 about?
ISO 21820 specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging.
ISO 21820 walks us through a method to evaluate the polytypes and their SiC ratios by UV-induced photoluminescence using non-contact and full-field measurement techniques.
Who is ISO 21820 for?
ISO 21820 on ultraviolet photoluminescence image test method is relevant to:
- Industrial processes
- Silicon Carbide Power Semiconductor manufacturers
- Chemical engineers
Why should you use ISO 21820?
Silicon carbide (SiC), which has a close-packed crystal structure, is a promising wide-bandgap (WBG) material applicable to laser diodes (LDs), light-emitting diodes (LEDs) and electronic power devices. Polytype inclusion generated during SiC growth is a common problem. During crystal growth, many types of SiC-stacking can occur within the bulk of a single sample.
ISO 21820 informs you about a test method for determining the polytypes and their SiC ratios, and the use of silicon carbide which has 10x more critical breakdown strength compared to silicon can help you operate at much higher temperatures, provide higher current density, experience reduced switching losses, and support higher switching frequencies.
