What is PD IEC TS 62607‑5‑3 about?
PD IEC TS 62607 discusses key control characteristics for nonmanufacturing. PD IEC TS 62607‑5‑3 outlines sample structures for evaluating a wide range of charge carrier concentrations in organic/nanomaterials that aims to improve performance and safety.
This specification is provided for both capacitance-voltage (C-V) measurements in metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration.
Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in PD IEC TS 62607‑5‑3.
Who is PD IEC TS 62607‑5‑3 for?
PD IEC TS 62607‑5‑3 on measurements of charge carrier concentration for thin-film organic/nanoelectronic devices is useful for:
- Organic/nanoelectronic device manufacturers
- Test centres for organic/nanoelectronic device
- Regulatory authorities
Why should you use PD IEC TS 62607‑5‑3?
Organic/Nano thin-film devices are attracting a lot of attention as promising candidates for light, low cost, flexible, and printable devices in large-area electronics applications. Recently, charge carrier doping techniques have been intensely studied and developed, in the same way as the mature silicon technologies.
PD IEC TS 62607‑5‑3 provides the best practice guidelines on sample structures, metal/insulator/semiconductor (MIS) structure, thin-film specimens with the van der Pauw configuration, criteria for choosing a method for measuring carrier concentration in organic semiconductor layers, and appropriate data formats for measurements of charge carrier concentration for thin-film organic/nanoelectronic devices.
This helps in choosing the right materials and semiconductors. In addition, it helps improve the performance and safety of the organic/nanoelectronic device that creates high-quality products.
